Tin sulfide thin films were prepared with different molarities of tin species (MSn) at the optimized substrate temperature using the Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin II chloride di hydrate precursor is varied from 0.05 to 0.25 (SnCl2 . 2 H2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS thin films with (111) crystallite orientation. On increasing the concentration, the multi-phases (SnS2 and Sn2 S3 ) were found to be present along with SnS material. The needle like grains were observed from SEM analysis in these SnS films. Interference effects were predominant in all these thin films in the wavelength region of 400–1100 nm. The direct optical band gap of tin sulfide thin films had decreased from 1.8 eV to 1.55 eV with an increase in MSn from 0.05 to 0.2 M, respectively and further increased to 1.755 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of p-type. A minimum resistivity value of 2.19 × 103 Ω cm was obtained for the film grown at Msn = 0.2 M.
