Wide band gap II-VI group semiconductors has been widely studied due to their fundamental structural, optical and electrical properties. Cadmium sulphide (CdS) has emerged as an important material due to its applications in photovoltaic cell as window layers, multilayer light emitting diodes, optical filters, thin film field effect transistors, transparent conducting semiconductor for Optoelectronic devices, gas sensors, a buffer layer is widely used as an n-type hetero-junction partner in all chalcopyrite based thin film solar cell, light detectors, etc. It is an n-type material with an optical band gap of 2.4eV. CdS thin films were deposited by dip coating method on glass substrates. The influence of the growth process on the structural, optical and electrical properties of polycrystalline CdS thin films were characterized by X-Ray diffraction technique (XRD), Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), Ultraviolet – Visible spectroscopy and Hot probe method.
