Volt-Ampere Characteristics Of The Crystals Tlin1-X Gd Se E2

The presented work describes the research of volt-ampere characteristics of the crystals TlIn_1-x Gd Se e₂ . Research was conducted in a non-static mode in temperature range of 80 ÷ 400° K. Results of study showed that the crystals 1 2 TlIn_1-x Gd Se₂ possess the switching properties with the memory. By increasing the temperature the threshold voltage increases, while the threshold current decreases. It is possible to control the threshold parameter of the crystals TlIn_1-x Gd Se e₂ with the change in the composition of the crystals and ambient temperature.