structural and optical properties of pulse plated cadmium selenide films

Research Article
*Manoharan, C. and Dhanapandian, S
Thin films, Semiconductor, II–VI, CdSe

Cadmium Selenide (CdSe) thin fil ms were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 – 50 % at a current density of 100 mA cm-2. XRD patterns of films deposited at different duty cycles exhibit the cubic structure. The peak widths decreased with increase of duty cycle. The crystallite size increased from 8 to 20 nm. Microstructural parameters like dislocation dneisty and strain were calculated.The transmission spectra exhibit interference fringes. Refractive index calculated by the envelope method varied in the range of 2.5 to 3.3.The optical band gap increased from 1.75 eV to 2.12 eV with increase of duty cycle. Nyquist plots were used to calculate the charge transfer reistance and double layer capacitance. Preliminary studies on the Photoelectrochemical cells using the films deposited at different duty cycles have yielded photo output without post annealing