Content addressable memories (CAMs) are special type of computer memory that is used in search intensive applications. It involves content based searching. The conventional CAM is designed using MOSFET, due to which the power consumption is very high because of parallel architecture and short channel Effects such as leakage current. However, the current trend is to use new non planar device architecture, the so called FinFET to overcome the problems of planar MOSFET stated above. Among the alternatives to planar MOSFET, FinFET is proved to be more efficient in terms of power. This paper proposes a design of NOR content addressable memory bit cell using 22-nm shorted gate FinFETs. The design has been synthesized in 22nm technology using Tanner EDA tool.
